Japanese and US chip makers will jointly develop technology to mass-produce a next-generation semiconductor using MRAM (magnetoresistive random access memory), the business daily Nikkei reported on Sunday.
Micron Technology and Tokyo Electron will lead the joint project. The companies aim to start mass production of MRAM as early as 2018, the newspaper said without citing sources.
MRAM is touted as the next frontier for computing memory over the current standard, DRAM (dynamic random access memory).
The technology offers a memory capacity 10 times that of DRAM and reduce its electricity draw to about two-thirds that of the existing standard, Nikkei said.
The Nikkei added Tohoku University, Shin-Etsu Chemical, Renesas Electronics and Hitachi ara also participationg to the project.
Toshiba and SK Hynix are jointly developing MRAM in a separate project while Samsung Electronics is doing its own research on the new chip, the report said.