Samsung's 32TB SSD includes cutting-edge 3D Chip technology

Samsung logoSamsung today introduced a next-generation flash memory solutions including a high-capacity 32TB SSD that will ship next year.

At Flash Memory Summit 2016, held in the Santa Clara (CA) Convention Center, Samsung showcased its 4th generation Vertical NAND (V-NAND) and a line-up of high-performance, high-capacity solid state drives (SSDs) available for its enterprise customers as well as Z-SSD, a new solution providing breakthrough performance for flash-based storage.

"With our 4th generation V-NAND technology, we can provide leading-edge differentiated values in high capacity, high performance and compact product dimensions, which together will contribute to our customers achieving better TCO results," said Young-Hyun Jun, President of the Memory Business at Samsung Electronics. "We will continue to introduce more advanced V-NAND solutions and expand our flash business initiatives in maximizing an unbeatable combination of performance and value."

Samsung's 32TB SSD includes cutting-edge 3D Chip technology

Samsung introduced its 4th generation, 64-layer triple-level-cell V-NAND flash memory that pushes the envelope of NAND scaling, performance and storage capacity. Stacking 64 layers of cell-arrays, the new V-NAND can increase its single-die density to 512Gb and its IO speed to 800Mbps. Starting in August 2013, Samsung has previously introduced three generations of “industry-first” V-NAND products with 24, 32 and 48-layer vertical cell-array stacking technologies.

Samsung plans to provide the world’s first 4th generation V-NAND flash memory products in the fourth quarter of this year.

Samsung’s latest Serial Attached SCSI (SAS) SSD is the world largest single drive ever introduced to the industry based on 512-gigabit (Gb) V-NAND chips. A total of 512 V-NAND chips are stacked in 16 layers to form a 1-terabyte (TB) package and the 32-terabyte (TB) SSD contains 32 of those packages.

The Samsung 1TB BGA SSD features a compact, ball grid array (BGA) package design that contains all essential SSD components including triple-level-cell V-NAND flash chips, LPDDR4 mobile DRAM and a new Samsung controller.

It will deliver high performance, reading sequentially at 1,500MB/s and writing sequentially at 900MB/s. By reducing its size up to 50 percent compared to its predecessor, the SSD weighs only about one gram (less than half the weight of a U.S. dime), making it appropriate for ultra-compact next generation notebooks, tablets and convertibles.

Next year, Samsung plans to launch its 1TB BGA SSD by adopting a high-density packaging technology called "FO-PLP (Fan-out Panel Level Packaging)" which Samsung Electronics developed with Samsung Electro-Mechanics.

Samsung has also developed a high performance, ultra-low latency SSD solution, the Z-SSD. Samsung's Z-SSD shares the fundamental structure of V-NAND and has a unique circuit design and controller that can maximize performance, with four times faster latency and 1.6 times better sequential reading than the Samsung PM963 NVMe SSD.

The Z-SSD will be used in systems that deal with extremely intensive real-time analysis as well as extending high performance to all types of workloads. It is expected to be released next year.

Source: CDRinfo

Tags: Samsung, SSD

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